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v00.0504
MICROWAVE CORPORATION
HMC471MS8G
Features
+20 dBm P1dB Output Power 20 dB Gain Output IP3: +34 dBm Supply (Vs): +6V to +12V 14.9 mm2 Ultra Small 8 Lead MSOP
SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
8
AMPLIFIERS - SMT
Typical Applications
The HMC471MS8G is a dual RF/IF gain block & LO or PA driver: * Cellular / PCS / 3G * Fixed Wireless & WLAN * CATV, Cable Modem & DBS * Microwave Radio & Test Equipment
General Description
The HMC471MS8G is a SiGe HBT Dual Channel Gain Block MMIC SMT amplifier covering DC to 5 GHz. This versatile product contains two gain blocks, packaged in a single 8 lead plastic MSOP, for use as either separate cascadable 50 Ohm RF/IF gain stages, LO or PA drivers or with both amplifiers combined utilizing external 90 hybrids to create a high linearity driver amplifier. Each amplifier in the HMC471MS8G offers 20 dB of gain, +20dBm P1dB with a +34 dBm output IP3 at 850 MHz while requiring only 80 mA from a single positive supply. The combined dual amplifier circuit delivers up to +21 dBm P1dB with +36dBm OIP3 for specific application bands through 4 GHz.
Functional Diagram
Electrical Specifications, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25 C
Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 4.0 GHz 4.0 - 5.0 GHz Min. 18.5 15.5 13 10.5 8 Typ. 21 17.5 15 12.5 10 0.008 12 14 8 13 9 7 5 20 19 17 14 12 10 34 32 27 25 22 3.25 4.0 80 Max. Units dB dB dB dB dB dB/ C dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dBm dB dB mA
Gain
Gain Variation Over Temperature Input Return Loss
0.012
Output Return Loss Reverse Isolation
Output Power for 1 dB Compression (P1dB)
16 14 11 9 7
Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure Supply Current (Icq)
Note: Data taken with broadband bias tee on device output. All specifications refer to a single amplifier. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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v00.0504
MICROWAVE CORPORATION
HMC471MS8G
SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Broadband Gain & Return Loss
25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz)
S21 S11 S22
Gain vs. Temperature
24 22 20 18 16 GAIN (dB) 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 FREQUENCY (GHz)
+25C +85C -40C
8
AMPLIFIERS - SMT
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Input Return Loss vs. Temperature
0 INPUT RETURN LOSS (dB)
+25C +85C -40C
Output Return Loss vs. Temperature
0 OUTPUT RETURN LOSS (dB)
+25C +85C -40C
-5
-5
-10
-10
-15
-15
-20 0 1 2 3 4 5 6 FREQUENCY (GHz)
-20 0 1 2 3 4 5 6 FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 REVERSE ISOLATION (dB) -5 -10 -15 -20 -25 -30 0 1 2 3 4 5 6 FREQUENCY (GHz)
+25C +85C -40C
Noise Figure vs. Temperature
10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 FREQUENCY (GHz)
+25C +85C -40C
Data shown is of a single amplifier.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0504
MICROWAVE CORPORATION
HMC471MS8G
SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
8
AMPLIFIERS - SMT
P1dB vs. Temperature
22 20 18 16 P1dB (dBm) 14 12 10 8 6 4 2 0
+25C +85C -40C
Psat vs. Temperature
24 22 20 18 Psat (dBm) 16 14 12 10 8 6 4 2 0
+25C +85C -40C
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
40
Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 80 mA @ 850 MHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 36 34 32 30 28 26 24 22 20 18 16 14 12 6 7 8 9 Vs (Vdc) 10 11 12
Gain P1dB Psat OIP3
35 OIP3 (dBm)
30
25
+25C +85C -40C
20
15 0 1 2 3 4 5 6 FREQUENCY (GHz)
Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 51 Ohms
90 88 86 84 Icc (mA) 82 80 78 76 74 72 70 68 4.4 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 -40C +25C +85C
Cross Channel Isolation
0 -5 PATH ISOLATION (dB) -10 -15 -20 -25 -30 -35 -40 -45 1 2 3 4 5 6 7 8
INPUT1-OUTPUT2 INPUT2-OUTPUT1
Vcc (Vdc)
FREQUENCY (GHz)
Data shown is of a single amplifier. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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v00.0504
MICROWAVE CORPORATION
HMC471MS8G
SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Gain*
22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 0.5
Input & Output Return Loss *
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) FREQUENCY (GHz)
INPUT RETURN LOSS OUTPUT RETURN LOSS
8
AMPLIFIERS - SMT
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GAIN (dB)
+25C +85C -40C
Reverse Isolation*
0 REVERSE ISOLATION (dB) -5 -10 -15 -20 -25 -30 -35 -40 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz)
Output IP3*
40
35 OIP3 (dBm)
30
+25C +85C -40C
25
20 1.4
1.6
1.8
2
2.2
2.4
2.6
FREQUENCY (GHz)
Output P1dB*
24 22 20 18 16 14 12 1.4
+25C +85C -40C
Output Psat*
24 22 20 18 16 14 12 1.4
+25C +85C -40C
P1dB (dBm)
1.6
1.8
2
2.2
2.4
2.6
Psat (dBm)
1.6
1.8
2
2.2
2.4
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
* Measurements shown are of both channels with 1.5 - 2.5 GHz 90 splitter/combiners on input & output (see application circuit for balanced operation). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0504
MICROWAVE CORPORATION
HMC471MS8G
SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
8
AMPLIFIERS - SMT
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) Collector Bias Current (Icc) RF Input Power (RFin)(Vcc = +4.2 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 32.6 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +6.0 Vdc 100 mA +17 dBm 150 C 2.12 W
30.7 C/W -65 to +150 C -40 to +85 C
Outline Drawing
NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0504
MICROWAVE CORPORATION
HMC471MS8G
SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Pin Descriptions
Pin Number Function Description Interface Schematic
8
AMPLIFIERS - SMT
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1
RFIN1
This pin is DC coupled. An off chip DC blocking capacitor is required.
8
RFOUT1
RF output and DC Bias (Vcc1) for the output stage.
2, 3, 6, 7
N/C
No connection. These pins may be connected to RF ground. Performance will not be affected.
4
RFIN2
This pin is DC coupled. An off chip DC blocking capacitor is required.
5
RFOUT2
RF output and DC Bias (Vcc2) for the output stage.
Ground Paddle
GND
Ground paddle must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0504
MICROWAVE CORPORATION
HMC471MS8G
SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
8
AMPLIFIERS - SMT
Application Circuit for Balanced Operation
Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature.
Recommended Bias Resistor Values for Icc= 75 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 6V 11 1/4 W 8V 39 1/2 W 10V 62 1/2 W 12V 91 1W
Recommended Component Values for Key Application Frequencies
Frequency (MHz) Component 50 L1, L2 C4, C5, C9, C10 270 nH 0.01 F 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 5000 6.8 nH 100 pF
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0504
MICROWAVE CORPORATION
HMC471MS8G
SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Evaluation PCB
8
AMPLIFIERS - SMT
List of Materials for Evaluation PCB 109185*
Item J1 - J4 J5 - J8 L1, L2 C1, C8 C2, C7 C3, C6 C4, C5, C9, C10 R1, R2 U1 PCB** Description PC Mount SMA Connector DC Pins Inductor, 0402 Pkg. 2.2 F Capacitor, Tantalum 1000 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. Capacitor, 0402 Pkg. Resistor, 2010 Pkg. HMC471MS8G 109162 Evaluation PCB
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
** Circuit Board Material: Rogers 4350
* Reference this number when ordering complete evaluation PCB. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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